Synthesis of graphene together with undesired CuxO nanodots on copper foils by low-pressure chemical vapor deposition

被引：4

作者：

Ge, Wen ^{[1
]}

Lu, Bin ^{[1
]}

Li, Wenjie ^{[1
]}

Lu, Jianguo ^{[1
]}

Ye, Zhizhen ^{[1
]}

机构：

[1] Zhejiang Univ, Dept Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

来源：

VACUUM | 2013年 / 97卷

基金：

中国国家自然科学基金;

关键词：

Graphene; Chemical vapor deposition; CuxO nanodots; Cu foil; BILAYER GRAPHENE; HIGH-QUALITY; LARGE-AREA; FILMS; GROWTH; SIZE;

D O I：

10.1016/j.vacuum.2013.04.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The synthesis of graphene on Cu foils has been carried out using a low-pressure chemical vapor deposition (LPCVD) process. Under certain growth conditions apart from the graphene flakes, undesired CuxO nanodots appear. The samples were characterized by scanning electron microscopy, atomic force microscopy, Raman spectroscopy and X-ray photoemission spectroscopy. On the basis of the results, we investigated the effect of growth parameters such as pressure, methane-to-hydrogen ratio and cooling atmosphere on the growth rate, the composition, especially the cleanliness of graphene by scanning electron microscopy in detail. It is shown that the obtained film is quite sensitive on the preparation conditions and the appearance of CuxO nanodots is preventable. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：9 / 14

页数：6

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