Spatio-spectral mapping of multimode vertical cavity surface emitting lasers

被引：15
作者：
Knopp, KJ
Christensen, DH
Vander Rhodes, G
Pomeroy, JM
Goldberg, BB
Ünlü, MS
机构：
[1] Natl Inst Stand & Technol, Boulder, CO 80303 USA
[2] Boston Univ, Dept Phys, Boston, MA 02215 USA
[3] Boston Univ, Dept Elect & Comp Engn, Boston, MA 02215 USA
[4] Boston Univ, Photon Ctr, Boston, MA 02215 USA
来源：
JOURNAL OF LIGHTWAVE TECHNOLOGY | 1999年 / 17卷 / 08期
基金：
美国国家科学基金会;
关键词：
microscopy; near field; spectral spatial mapping; transverse modes; vertical cavity surface emitting laser (VCSEL); mapping;
D O I：
10.1109/50.779165
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports the spatial and spectral characteristics of multimode vertical cavity surface emitting laser (VCSEL) emission using near field scanning optical microscopy (NSOM), We have investigated 15 mu m diameter proton implanted 850 nm devices used in 2 Gb/s multimode fiber optic links, We have studied their near field spatial distribution of intensity and the lasing wavelengths of their transverse modes. False colored images were created to portray relative intensity, and spatial distribution information for each transverse mode. Correlation with shear force data allowed mapping of the optical distributions to topographical features of the device. Lasing filaments were observed at high drive currents. Spatially overlapping transverse modes were observed to compete for available gain while spatially isolated modes coexisted.
引用
收藏
页码：1429 / 1435
页数：7
相关论文
共 15 条
[1]  
[Anonymous], 1987, COLOR THEORY ITS APP
[2]   NEAR-FIELD OPTICS - MICROSCOPY, SPECTROSCOPY, AND SURFACE MODIFICATION BEYOND THE DIFFRACTION LIMIT [J].
BETZIG, E ;
TRAUTMAN, JK .
SCIENCE, 1992, 257 (5067) :189-195
[3]   COMBINED SHEAR FORCE AND NEAR-FIELD SCANNING OPTICAL MICROSCOPY [J].
BETZIG, E ;
FINN, PL ;
WEINER, JS .
APPLIED PHYSICS LETTERS, 1992, 60 (20) :2484-2486
[4]   COHERENCE OF VCSELS FOR HOLOGRAPHIC INTERCONNECTS [J].
CHILLA, JLA ;
BENWARE, B ;
WATSON, ME ;
STANKO, P ;
ROCCA, JJ ;
WILMSEN, C ;
FELD, S ;
LEIBENGUTH, R .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (05) :449-451
[5]   Near-field optical studies of semiconductor heterostructures and laser diodes [J].
Goldberg, BB ;
Unlu, MS ;
Herzog, WD ;
Ghaemi, HF ;
Towe, E .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (04) :1073-1081
[6]   Reliability of proton-implanted VCSELs for data communications [J].
Guenter, JK ;
Hawthorne, RA ;
Granville, DN ;
HibbsBrenner, MK ;
Morgan, RA .
FABRICATION, TESTING, AND RELIABILITY OF SEMICONDUCTOR LASERS, 1996, 2683 :102-113
[7]   Comprehensive numerical modeling of vertical-cavity surface-emitting lasers [J].
Hadley, GR ;
Lear, KL ;
Warren, ME ;
Choquette, KD ;
Scott, JW ;
Corzine, SW .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (04) :607-616
[8]   LARGE-AREA MULTITRANSVERSE-MODE VCSELS FOR MODAL NOISE-REDUCTION IN MULTIMODE FIBER SYSTEMS [J].
HAHN, KH ;
TAN, MR ;
HOUNG, YM ;
WANG, SY .
ELECTRONICS LETTERS, 1993, 29 (16) :1482-1483
[9]   VERTICAL-CAVITY SURFACE-EMITTING LASERS - DESIGN, GROWTH, FABRICATION, CHARACTERIZATION [J].
JEWELL, JL ;
HARBISON, JP ;
SCHERER, A ;
LEE, YH ;
FLOREZ, LT .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1991, 27 (06) :1332-1346
[10]   PIEZOELECTRIC TIP-SAMPLE DISTANCE CONTROL FOR NEAR-FIELD OPTICAL MICROSCOPES [J].
KARRAI, K ;
GROBER, RD .
APPLIED PHYSICS LETTERS, 1995, 66 (14) :1842-1844
12