Balistic magnetoresistance in nanocontacts electrochemically grown between macro- and microscopic ferromagnetic electrodes

被引:22
作者
García, N [1 ]
Qiang, GG [1 ]
Saveliev, IG [1 ]
机构
[1] CSIC, Lab Fis Sistemas Pequenos & Nanotecnol, E-28006 Madrid, Spain
关键词
D O I
10.1063/1.1459108
中图分类号
O59 [应用物理学];
学科分类号
摘要
Our results prove the local origin of magnetoresistance in electrochemically deposited Ni nanocontacts. Experiments have been done using a complex setup for both in situ growth and ballistic magnetoresistance (BMR) measurements. Nanocontacts have been grown between two macroscopic Ni wires. In situ experiments with variation of the nanocontact diameter from 3 to 20 nm have been done using the same pair of wires. BMR values from 0.5% to 100% have been observed but no correlation of BMR value with the sample resistance, i.e., with the nanocontact cross section, has been found. These results show that the BMR in the nanometric size contact is determined by local geometrical and magnetic structures near the nanocontact rather than by the contact cross section itself. The hypothesis of existence of the intrinsic nonmagnetic dead layer in the ferromagnetic nanocontact is proposed to account for the BMR properties of the nanometric size contacts. Additionally, we report a BMR value of 200% in a Ni nanocontact (5 nm diameter) electrochemically grown between two nonmagnetic macroscopic gold wires. An external magnetic field has been used during the electrochemical deposition to fix the easy magnetic axis of the deposited Ni layer. (C) 2002 American Institute of Physics.
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收藏
页码:1785 / 1787
页数:3
相关论文
共 19 条
  • [11] GORDON F, 1983, J APPL PHYS, V49, P5306
  • [12] HOUGHT K, 1995, PHYS REV B, V51, P9855
  • [13] POINT-CONTACT SPECTROSCOPY IN METALS
    JANSEN, AGM
    VANGELDER, AP
    WYDER, P
    [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (33): : 6073 - 6118
  • [14] MOLYNEUX VA, UNPUB
  • [15] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS
    MOODERA, JS
    KINDER, LR
    WONG, TM
    MESERVEY, R
    [J]. PHYSICAL REVIEW LETTERS, 1995, 74 (16) : 3273 - 3276
  • [16] Resistivity due to a domain wall in ferromagnetic metal
    Tatara, G
    Fukuyama, H
    [J]. PHYSICAL REVIEW LETTERS, 1997, 78 (19) : 3773 - 3776
  • [17] Domain wall scattering explains 300 % ballistic magnetoconductance of nanocontacts
    Tatara, G
    Zhao, YW
    Muñoz, M
    García, N
    [J]. PHYSICAL REVIEW LETTERS, 1999, 83 (10) : 2030 - 2033
  • [18] Progress and outlook for MRAM technology
    Tehrani, S
    Slaughter, JM
    Chen, E
    Durlam, M
    Shi, J
    DeHerrera, M
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 1999, 35 (05) : 2814 - 2819
  • [19] SIZE EFFECT AND NON-LOCAL BOLTZMANN TRANSPORT EQUATION IN ORIFICE AND DISK GEOMETRY
    WEXLER, G
    [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1966, 89 (566P): : 927 - +