Pressureless Silver Sintering Die-Attach for SiC Power Devices

被引：14

作者：

Hascoet, Stanislas ^{[1
]}

Buttay, Cyril ^{[1
]}

Planson, Dominique ^{[1
]}

Chiriac, Rodica ^{[2
]}

Masson, Amandine ^{[1
]}

机构：

[1] Univ Lyon, INSA Lyon, Lab Ampere, CNRS,UMR 5005, F-69621 Villeurbanne, France

[2] Univ Lyon, CNRS UMR 5615, LMI, F-69622 Lyon, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2012 | 2013年 / 740-742卷

关键词：

silver sintering; die-attach;

D O I：

10.4028/www.scientific.net/MSF.740-742.851

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Pressureless silver sintering is an interesting die-attach technique that could overcome the reliability limitations of the power electronic devices caused by their packaging. In this paper, we study the manufacturing parameters that affect the die attach: atmosphere, drying time, heating ramp rate, sintering temperature and duration. It is found that sintering under air gives better results, but causes the substrates to oxidize. Sintering under nitrogen keeps the surfaces oxide-free, at the cost of a weaker attach.

引用

页码：851 / +

页数：2