13.6%-efficient Cu(In,Ga)Se2 solar cell with absorber fabricated by RF sputtering of (In,Ga)2Se3 and Cu Se targets

被引：22
作者：
Zhu, X. L. [1 ]
Wang, Y. M. [1 ]
Zhou, Z. [1 ]
Li, A. M. [1 ]
Zhang, L. [1 ]
Huang, F. Q. [1 ,2 ]
机构：
[1] Chinese Acad Sci, Shanghai Inst Ceram, CAS Key Lab Mat Energy Convers, Shanghai 200050, Peoples R China
[2] Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2013年 / 113卷
关键词：
Cu(In; Ga)Se-2; Selenide compound target; Sequential sputtering; Thin film solar cells; CUINSE2; THIN-FILMS; SELENIZATION; KINETICS; MOSE2;
D O I：
10.1016/j.solmat.2013.02.001
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
A conversion efficiency of 13.6% has been achieved in Cu(In,Ga)Se-2 (CIGS) thin film solar cell with absorber layer fabricated by sequentially RF sputtering (In,Ga)(2)Se-3 and CuSe targets and further annealing in Se vapor. The significant improvement, comparing with the efficiency of 10.8% for CIGS solar cell sputtering from a quaternary CIGS target, was attributed to smoother surface, better crystallinity, and more compact structure of the CIGS film. The reaction pathway of (In,Ga)(2)Se-3/CuSe bilayer was discussed, and such a bilayer design was demonstrated to be energetically favorable to form a better-crystallized CIGS film. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：140 / 143
页数：4
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