A simple model of DIGBL effect for polysilicon films and polysilicon thin-film transistors

被引：4

作者：

Wu, Wei-Jing ^{[1
]}

Yao, Ruo-He ^{[1
]}

机构：

[1] S China Univ Technol, Sch Elect & Informat Engn, Inst Microelect, Guangzhou 510640, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 10期

关键词：

analytical model; drain-induced grain barrier lowering (DIGBL) effect; polysilicon films; polysilicon thin-film transistors (poly-Si TFTs);

D O I：

10.1109/LED.2008.2002318

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Based on charge conservation assumption, analytical models of the drain-induced grain barrier lowering effect are developed for polysilicon films by J-D Poisson's equation and for polysilicon thin-film transistors (poly-Si TFTs) by quasi-2-D Poisson's equation. It is shown that the voltage drop at the lower barrier side is less than that at the higher barrier side for both poly-Si films and poly-Si TFTs when applying a lateral bias across the grain-boundary barrier.

引用

页码：1128 / 1131

页数：4

共 8 条

[1]

Cheng CH, 1999, IEEE T ENG MANAGE, V46, P4, DOI 10.1109/17.740028

[2]

KORSH GJ, 1978, SOLID STATE ELECTRON, V21, P1045, DOI 10.1016/0038-1101(78)90183-1

[3] A QUASI-2-DIMENSIONAL ANALYTICAL MODEL FOR THE TURN-ON CHARACTERISTICS OF POLYSILICON THIN-FILM TRANSISTORS [J].