Structures of Uncharacterised Polymorphs of Gallium Oxide from Total Neutron Diffraction

被引:394
作者
Playford, Helen Y. [1 ]
Hannon, Alex C. [2 ]
Barney, Emma R. [2 ]
Walton, Richard I. [1 ]
机构
[1] Univ Warwick, Dept Chem, Coventry CV4 7AL, W Midlands, England
[2] Rutherford Appleton Lab, ISIS Facil, Didcot OX11 0QX, Oxon, England
关键词
gallium; materials science; neutron diffraction; pair-distribution analysis; polymorphism; solid-state structures; CRYSTAL-STRUCTURE; THERMAL-DECOMPOSITION; ELECTRICAL-PROPERTIES; POWDER DIFFRACTION; HIGH-PRESSURE; SOL-GEL; BETA-GA2O3; ALUMINA; TRANSFORMATION; NANOPARTICLES;
D O I
10.1002/chem.201203359
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A structural investigation is reported of polymorphs of Ga2O3 that, despite much interest in their properties, have hitherto remained uncharacterised due to structural disorder. The most crystalline sample yet reported of -Ga2O3 was prepared by solvothermal oxidation of gallium metal in ethanolamine. Structure refinement using the Rietveld method reveals -Ga2O3 has a defect Fd$\bar 3$m spinel structure, while pair distribution function analysis shows that the short-range structure is better modelled with local F$\bar 4$3m symmetry. In further solvothermal oxidation reactions a novel gallium oxyhydroxide, Ga5O7(OH), is formed, the thermal decomposition of which reveals a new, transient gallium oxide polymorph, -Ga2O3, before transformation into -Ga2O3. In contrast, the thermal decomposition of Ga(NO3)39H2O first forms epsilon-Ga2O3 and then -Ga2O3. Examination of in situ thermodiffraction data shows that epsilon-Ga2O3 is always contaminated with -Ga2O3 and with this knowledge a model for its structure was deduced and refinedspace group P63mc with a ratio of tetrahedral/octahedral gallium of 2.2:1 in close-packed oxide layers. Importantly, thermodiffraction provides no evidence for the existence of the speculated bixbyite structured -Ga2O3; at the early stages of thermal decomposition of Ga(NO3)39H2O the first distinct phase formed is merely small particles of epsilon-Ga2O3.
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收藏
页码:2803 / 2813
页数:11
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