Proton radiation damage experiment for X-ray SOI pixel detectors

被引:7
作者
Yarita, Keigo [1 ]
Kohmura, Takayoshi [1 ]
Hagino, Kouichi [1 ]
Kogiso, Taku [1 ]
Oono, Kenji [1 ]
Negishi, Kousuke [1 ]
Tamasawa, Koki [1 ]
Sasaki, Akinori [1 ]
Yoshiki, Satoshi [1 ]
Tsuru, Takeshi Go [2 ]
Tanaka, Takaaki [2 ]
Matsumura, Hideaki [2 ]
Tachibana, Katsuhiro [2 ]
Hayashi, Hideki [2 ]
Harada, Sodai [2 ]
Takeda, Ayaki [3 ]
Mori, Koji [3 ]
Nishioka, Yusuke [3 ]
Takebayashi, Nobuaki [3 ]
Yokoyama, Shoma [3 ]
Fukuda, Kohei [3 ]
Arai, Yasuo [4 ]
Miyoshi, Toshinobu [4 ]
Kurachi, Ikuo [5 ]
Hamano, Tsuyoshi [6 ]
机构
[1] Tokyo Univ Sci, Sch Sci & Technol, Dept Phys, 2641 Yamazaki, Noda, Chiba 2788510, Japan
[2] Kyoto Univ, Fac Sci, Dept Phys, Sakyo Ku, Kyoto 6068502, Japan
[3] Univ Miyazaki, Fac Engn, Dept Appl Phys, 1-1 Gakuen Kibanodai Nishi, Miyazaki, Miyazaki 8892192, Japan
[4] High Energy Accelerator Res Org KEK, Inst Particle & Nucl Studies, 1-1 Oho, Ibaraki 3050801, Japan
[5] High Energy Accelerator Res Org KEK, Dept Adv Accelerator Technol, 1-1 Oho, Ibaraki 3050801, Japan
[6] NIRS, Inage Ku, Anagawa 4-9-1, Chiba, Chiba 2638555, Japan
基金
日本学术振兴会;
关键词
X-ray; SOI; CMOS camera;
D O I
10.1016/j.nima.2018.09.057
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
In low earth orbit, there are many cosmic rays composed primarily of high energy protons. These cosmic rays cause surface and bulk radiation effects, resulting in degradation of detector performance. Quantitative evaluation of radiation hardness is essential in development of X-ray detectors for astronomical satellites. We performed proton irradiation experiments on newly developed X-ray detectors called XRPIX based on siliconon-insulator technology at HIMAC in National Institute of Radiological Sciences. We irradiated 6 MeV protons with a total dose of 0.5 krad, equivalent to 6 years irradiation in orbit. As a result, the gain increases by 0.2% and the energy resolution degrades by 0.5%. Finally we irradiated protons up to 20 krad and found that detector performance degraded significantly at 5 krad. With 5 krad irradiation corresponding to 60 years in orbit, the gain increases by 0.7% and the energy resolution worsens by 10%. By decomposing into noise components, we found that the increase of the circuit noise is dominant in the degradation of the energy resolution.
引用
收藏
页码:457 / 461
页数:5
相关论文
共 13 条
[11]  
Takeda A., 2014, P TECHN INSTR PART P
[12]   Design and Evaluation of an SOI Pixel Sensor for Trigger-Driven X-Ray Readout [J].
Takeda, Ayaki ;
Arai, Yasuo ;
Ryu, Syukyo Gando ;
Nakashima, Shinya ;
Tsuru, Takeshi Go ;
Imamura, Toshifumi ;
Ohmoto, Takafumi ;
Iwata, Atsushi .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (02) :586-591
[13]  
Tobita N., 2015, P INT WORKSH SOI PIX