The reaction pathways of the oxygen plasma pulse in the hafnium oxide atomic layer deposition process

被引:19
作者
Jeon, Hyeongtag [2 ]
Won, Youngdo [1 ]
机构
[1] Hanyang Univ, Dept Chem, Seoul 133791, South Korea
[2] Hanyang Univ, Div Mat Sci & Engn, Seoul 133791, South Korea
关键词
D O I
10.1063/1.2991288
中图分类号
O59 [应用物理学];
学科分类号
摘要
The plasma enhanced atomic layer deposition process for the HfO2 thin film is modeled as simple reactions between Hf(OH)(3)NH2 and reactive oxygen species. The density functional theory calculation was performed for plausible reaction pathways to construct the reaction profile. While the triplet molecular oxygen is unlikely to form a reactive complex, the singlet molecular oxygen forms the stable adduct that goes through the transition state and completes the reaction pathway to the products. Either two singlet or two triplet oxygen atoms make the singlet adduct complex, which follows the same pathway to the product as the singlet molecular oxygen reacts. (C) 2008 American Institute of Physics.
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页数:3
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