Lock-in IR-thermography - A novel tool for material and device characterization

被引：67
作者：
Huth, S
Breitenstein, O
Huber, A
Dantz, D
Lambert, U
Altmann, F
机构：
[1] Max Planck Inst Mikrostrukturphys, DE-06120 Halle Saale, Germany
[2] Wacker Siltron AG, DE-84479 Burghausen, Germany
[3] Fraunhofer Inst Werkstoffmech, Inst Halle, DE-06120 Halle Saale, Germany
来源：
GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY | 2002年 / 82-84卷
关键词：
defect imaging; GOI defects; IC-testing; thermography;
D O I：
10.4028/www.scientific.net/SSP.82-84.741
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A novel non-destructive and non-contacting technique for the spatially resolved detection of small leak-age currents in electronic devices and MOS materials is presented. Highly-sensitive lock-in infrared (IR-) thermography is used to localize leak-age current induced temperature variations down to 10 muK at a lateral resolution down to 5 mum. Leakage currents of about 1 mA can be localized within seconds and some muA may be detected after less than 1 h measurement.
引用
收藏
页码：741 / 746
页数：6
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