Raman Spectroscopic Studies of Dinaphthothienothiophene (DNTT)

被引：13

作者：

Bhardwaj, Bishwajeet Singh ^{[1
]}

Sugiyama, Takeshi ^{[1
]}

Namba, Naoko ^{[2
]}

Umakoshi, Takayuki ^{[1
]}

Uemura, Takafumi ^{[2
]}

Sekitani, Tsuyoshi ^{[2
]}

Verma, Prabhat ^{[1
]}

机构：

[1] Osaka Univ, Dept Appl Phys, Suita, Osaka 5650871, Japan

[2] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 5670047, Japan

来源：

MATERIALS | 2019年 / 12卷 / 04期

关键词：

DNTT; transistor; Raman spectroscopy; DFT calculation; orientation; PENTACENE; PERFORMANCE; POLARIZATION; ELECTRONICS; ORIENTATION; TRANSISTORS; FILMS;

D O I：

10.3390/ma12040615

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The application of dinaphthothienothiophene (DNTT) molecules, a novel organic semiconductor material, has recently increased due to its high charge carrier mobility and thermal stability. Since the structural properties of DNTT molecules, such as the molecular density distribution and molecular orientations, significantly affect their charge carrier mobility in organic field-effect transistors devices, investigating these properties would be important. Here, we report Raman spectroscopic studies on DNTT in a transistor device, which was further analyzed by the density functional theory. We also show a perspective of this technique for orientation analysis of DNTT molecules within a transistor device.

引用

页数：10

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