Temperature-dependent optical absorption of SrTiO3

被引:46
作者
Kok, Dirk J. [1 ]
Irmscher, Klaus [1 ]
Naumann, Martin [1 ]
Guguschev, Christo [1 ]
Galazka, Zbigniew [1 ]
Uecker, Reinhard [1 ]
机构
[1] Leibniz Inst Crystal Growth, D-12489 Berlin, Germany
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2015年 / 212卷 / 09期
关键词
band gaps; heat radiation; optical absorption; radiation transport; SrTiO3; GROWTH; CRYSTALS; MOBILITY; TRANSPORT;
D O I
10.1002/pssa.201431836
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The optical absorption edge and near infrared absorption of SrTiO3 were measured at temperatures from 4 to 1703 K. The absorption edge decreases from 3.25 eV at 4K to 1.8 eV at 1703K and is extrapolated to approximately 1.2 eV at the melting point (2350 K). The transmission in the near IR decreases rapidly above 1400K because of free carrier absorption and is about 50% of the room temperature value at 1673 K. The free carriers are generated by thermal excitation of electrons over the band gap and the formation of charged vacancies. The observed temperature-dependent infrared absorption can be well reproduced by a calculation based on simple models for the intrinsic free carrier concentration and the free carrier absorption coefficient. The measured red shift of the optical absorption edge and the rising free carrier absorption strongly narrow the spectral range of transmission and impede radiative heat transport through the crystal. These effects have to be considered in high temperature applications of SrTiO3-based devices, as the number of free carriers rises considerably, and in bulk crystal growth to avoid growth instabilities. Temperature dependent optical absorption edge of SrTiO3, measured, fitted, and extrapolated to the melting point. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:1880 / 1887
页数:8
相关论文
共 41 条
[1]  
[Anonymous], 2006, Semiconductor Material and Device Characterization, DOI DOI 10.1002/0471749095
[2]   FREE-CARRIER ABSORPTION IN REDUCED SRTIO3 [J].
BAER, WS .
PHYSICAL REVIEW, 1966, 144 (02) :734-&
[3]   RAMAN-SPECTRA OF STRONTIUM-TITANATE [J].
BALACHANDRAN, U ;
EROR, NG .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1982, 65 (04) :C54-C56
[4]   FLAME-FUSION GROWTH OF SRTIO3 [J].
BEDNORZ, JG ;
SCHEEL, HJ .
JOURNAL OF CRYSTAL GROWTH, 1977, 41 (01) :5-12
[5]   OPTICAL INVESTIGATION OF OXYGEN INCORPORATION IN SRTIO3 [J].
BIEGER, T ;
MAIER, J ;
WASER, R .
SOLID STATE IONICS, 1992, 53 (pt 1) :578-582
[6]  
Dodge M. J., 1986, HDB LASER SCI TECH 2, DOI [10.1201/9781003067955, DOI 10.1201/9781003067955]
[7]  
Dragoman D, 2002, OPTICAL CHARACTERIZATION OF SOLIDS, P1
[8]   INFRA-RED ABSORPTION IN SEMICONDUCTORS [J].
FAN, HY .
REPORTS ON PROGRESS IN PHYSICS, 1956, 19 :107-155
[9]   HOLE MOBILITY IN ACCEPTOR-DOPED, MONOCRYSTALLINE SRTIO3 [J].
FLEISCHER, M ;
MEIXNER, H ;
TRAGUT, C .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1992, 75 (06) :1666-1668
[10]   ELECTRONIC TRANSPORT IN STRONTIUM TITANATE [J].
FREDERIKSE, HPR ;
THURBER, WR ;
HOSLER, WR .
PHYSICAL REVIEW, 1964, 134 (2A) :A442-+