Reliable high-efficiency high-brightness laser diode bars at 940 nm

被引：11

作者：

Li, HX ^{[1
]}

Truchan, T ^{[1
]}

Brown, D ^{[1
]}

Pryor, R ^{[1
]}

Pandey, R ^{[1
]}

Reinhardt, F ^{[1
]}

Mott, J ^{[1
]}

Treusch, G ^{[1
]}

Macomber, S ^{[1
]}

机构：

[1] Spectra Phys Semiconductor Lasers Inc, Tucson, AZ 85706 USA

来源：

OPTICS AND LASER TECHNOLOGY | 2004年 / 36卷 / 04期

关键词：

quantum well lasers; semiconductor laser arrays; III-V semiconductors;

D O I：

10.1016/j.optlastec.2003.09.017

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

High-quality InGaAs/AlGaAs laser diode bars emitting at 940 nm have been fabricated by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). Two hundred and ten Watts maximum continuous-wave output power and a maximum power conversion efficiency of 60% at an output power of 72 W have been demonstrated for a single 1-cm-wide laser bar. These bars exhibit a very good beam quality of 5.7degrees x 27.2degrees (full-width at half-maximum). Reliability test have been carried out for over 2000 h at similar to58 W at room temperature. Under these conditions, the extrapolated lifetime is similar to100,000 h, which suggests that AlGaAs-based lasers of proper designs could have similar long-term reliability as their Al-free counterpart. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：327 / 329

页数：3

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