Origin of enhanced electrical and conducting properties in pentacene films doped by molybdenum trioxide

被引：60

作者：

Lou, Yan-Hui ^{[1
,2
]}

Xu, Mei-Feng ^{[1
]}

Zhang, Lei ^{[1
]}

Wang, Zhao-Kui ^{[1
,3
]}

Naka, Shigeki ^{[3
]}

Okada, Hiroyuki ^{[3
]}

Liao, Liang-Sheng ^{[1
]}

机构：

[1] Soochow Univ, Jiangsu Key Lab Carbon Based Funct Mat & Devices, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China

[2] Soochow Univ, Sch Energy, Suzhou 215006, Jiangsu, Peoples R China

[3] Toyama Univ, Fac Engn, Toyama 9308555, Japan

来源：

ORGANIC ELECTRONICS | 2013年 / 14卷 / 10期

基金：

日本学术振兴会;

关键词：

MoO3-doped pentacene; Trap density; Conductivity; Charge transfer; LIGHT-EMITTING-DIODES; ORGANIC SEMICONDUCTORS; HOLE INJECTION; STAGE STRUCTURE; TRANSPORT; TRANSITION; TRANSISTORS; EFFICIENT; MOBILITY; FIELD;

D O I：

10.1016/j.orgel.2013.07.017

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Molybdenum trioxide (MoO3) doped organic semiconductors have shown attractive applications in organic electric devices. The authors carried out an investigation on the origin of enhanced photoelectric characteristics in MoO3-doped pentacene films. Electrical properties including charge transport, trap density and conductivity in bulk MoO3-doped pentacene films were investigated through fundamental measurements of current-voltage characteristics. Electrical structure and conducting mechanism in MoO3-doped pentacene films were further evaluated by X-ray diffraction and X-ray photoelectron spectroscopy measurements. The experimental results suggest that the improved conductivity in MoO3-doped pentacene film was partly associated with the increased ratio of low Mo oxidation state (Mo4+) with a fact of better conducting property of MoO2 than that MoO3. (C) 2013 Elsevier B. V. All rights reserved.

引用

页码：2698 / 2704

页数：7

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