Investigations of ZnO thin films deposited by a reactive pulsed laser ablation

被引:4
作者
Cui, J. B. [1 ]
Soo, Y. C. [1 ]
Kandel, H. [1 ]
Thomas, M. A. [1 ]
Chen, T. P. [1 ]
Daghlian, C. P. [2 ]
机构
[1] Univ Arkansas, Dept Phys & Astron, Little Rock, AR 72204 USA
[2] Dartmouth Coll, EM Facil, Hanover, NH 03755 USA
来源
SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES | 2009年 / 52卷 / 01期
关键词
thin films; pulsed laser deposition; optical property; zinc oxide; ZINC-OXIDE; OPTICAL-PROPERTIES; GROWTH; NANOWIRES; TEMPERATURE; TRANSPORT; TARGET; SI;
D O I
10.1007/s11431-008-0339-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Highly transparent ZnO thin films were deposited at different substrate temperatures by pulsed laser deposition in an oxygen atmosphere. The thin films were characterized by various techniques including X-ray diffraction, scanning electron microscopy, optical absorption, and photoluminescence. We demonstrated that oriented wurtzite ZnO thin films could be deposited at room temperature using a high purity zinc target. Variable temperature photoluminescence revealed new characteristics in the band edge emission. The underlying mechanism for the observed phenomena was also discussed.
引用
收藏
页码:99 / 103
页数:5
相关论文
共 19 条
[1]   Initial preferred growth in zinc oxide thin films on Si and amorphous substrates by a pulsed laser deposition [J].
Choi, JH ;
Tabata, H ;
Kawai, T .
JOURNAL OF CRYSTAL GROWTH, 2001, 226 (04) :493-500
[2]   Enhanced nucleation, growth rate, and dopant incorporation in ZnO nanowires [J].
Cui, JB ;
Gibson, UJ .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (46) :22074-22077
[3]   Defect control and its influence on the exciton emission of electrodeposited ZnO nanorods [J].
Cui, Jingbiao .
JOURNAL OF PHYSICAL CHEMISTRY C, 2008, 112 (28) :10385-10388
[4]   Low-temperature wafer-scale production of ZnO nanowire arrays [J].
Greene, LE ;
Law, M ;
Goldberger, J ;
Kim, F ;
Johnson, JC ;
Zhang, YF ;
Saykally, RJ ;
Yang, PD .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 2003, 42 (26) :3031-3034
[5]   Origin of green luminescence in ZnO thin film grown by molecular-beam epitaxy [J].
Heo, YW ;
Norton, DP ;
Pearton, SJ .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (07)
[6]  
Huang MH, 2001, ADV MATER, V13, P113, DOI 10.1002/1521-4095(200101)13:2<113::AID-ADMA113>3.0.CO
[7]  
2-H
[8]   Comparative study on the growth characteristics of ZnO nanowires and thin films by metalorganic chemical vapor deposition (MOCVD) [J].
Jeong, MC ;
Oh, BY ;
Lee, W ;
Myoung, JM .
JOURNAL OF CRYSTAL GROWTH, 2004, 268 (1-2) :149-154
[9]   POINT-DEFECTS AND LUMINESCENCE-CENTERS IN ZINC-OXIDE AND ZINC-OXIDE DOPED WITH MANGANESE [J].
LIU, M ;
KITAI, AH ;
MASCHER, P .
JOURNAL OF LUMINESCENCE, 1992, 54 (01) :35-42
[10]   Optical properties of single-crystalline ZnO nanowires on m-sapphire [J].
Ng, HT ;
Chen, B ;
Li, J ;
Han, JE ;
Meyyappan, M ;
Wu, J ;
Li, SX ;
Haller, EE .
APPLIED PHYSICS LETTERS, 2003, 82 (13) :2023-2025