Improved bandwidth of a 2THz hot-electron bolometer heterodyne mixer fabricated on sapphire with a GaN buffer layer

被引：2

作者：

Antipov, S. ^{[1
]}

Trifonov, A. ^{[1
]}

Krause, S. ^{[2
]}

Meledin, D. ^{[2
]}

Kaurova, N. ^{[1
]}

Rudzinski, M. ^{[3
]}

Desmaris, V ^{[2
]}

Belitsky, V ^{[2
]}

Goltsman, G. ^{[1
,4
]}

机构：

[1] Moscow State Pedag Univ, Moscow, Russia

[2] Chalmers Univ Technol, Grp Adv Receiver Dev, SE-41296 Gothenburg, Sweden

[3] Inst Elect Mat Technol, Warsaw, Poland

[4] Natl Res Univ Higher Sch Econ, Moscow, Russia

来源：

SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2019年 / 32卷 / 07期

关键词：

HEB; GaN buffer layer; gain and noise bandwidth; THZ;

D O I：

10.1088/1361-6668/ab137b

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the signal-to-noise and gain bandwidth of a niobium nitride (NbN) hot-electron bolometer (HEB) mixer at 2 THz fabricated on a sapphire substrate with a GaN buffer layer. Two mixers with different DC properties and geometrical dimensions were studied and they demonstrated very close bandwidth performance. The signal-to-noise bandwidth is increased to 8 GHz in comparison to the previous results, obtained without a buffer-layer. The data were taken in a quasi-optical system with the use of the signal-to-noise method, which is close to the signal levels used in actual astrophysical observations. We find an increase of the gain bandwidth to 5 GHz. The results indicate that prior results obtained on a substrate of crystalline GaN can also be obtained on a conventional sapphire substrate with a few micron MOCVD-deposited GaN buffer-layer.

引用

页数：7

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