Theory of an electrically injected bulk polariton laser

被引：16

作者：

Solnyshkov, Dmitry ^{[1
]}

Petrolati, Eleonora ^{[2
]}

Di Carlo, Aldo ^{[2
]}

Malpuech, Guillaume ^{[1
]}

机构：

[1] Univ Clermont Ferrand, CNRS, LASMEA, F-61377 Aubiere, France

[2] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 01期

关键词：

Bose-Einstein condensation; current density; dissociation; excitons; gallium compounds; ground states; III-V semiconductors; laser cavity resonators; microcavity lasers; polaritons; quantum well lasers; wide band gap semiconductors; BOSE-EINSTEIN CONDENSATION; SEMICONDUCTOR MICROCAVITY; EXCITON FORMATION; DYNAMICS; GAN;

D O I：

10.1063/1.3067859

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present the first simulation of an electrically injected polariton laser device based on Bose-Einstein condensation of exciton polaritons in a bulk GaN microcavity. Our simulator self-consistently describes carrier flow, exciton formation and dissociation, and relaxation of exciton polaritons toward the ground state. We find a density-current threshold of about 50 A/cm(2) at room temperature, which could be further improved by using polariton lasers based on quantum wells.

引用

页数：3

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