Ku-Band to F-Band Active Multiplier Chain in 65-nm CMOS

被引:0
作者
Khamaisi, Bassam [1 ]
Socher, Eran [1 ]
机构
[1] Tel Aviv Univ, Sch Elect Engn, Tel Aviv, Israel
来源
2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2016年
关键词
CMOS; F-band; Frequency Multiplier; Ku-band; F-band Power Amplifier; MM-Wave;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A compact single chip X9 frequency multiplier from Ku-band to F-band implemented in 65-nm CMOS is presented. A chain of transformer coupled stages is used, including two triplers, realized with differential cascode stages, Q-band and F-band amplifiers. The circuit reaches saturated output power of +6.3 dBm at 124 GHz with a 10% bandwidth from 117 to 129.3 GHz. The suppression of unwanted harmonics is better than 25 dBc across the bandwidth. The core design occupies and consumes 328 mW from a 1.2 V DC supply. Supply voltage increased to 1.4 V yields a peak output power of + 8 dBm with DC consumption of 376 mW. The presented design achieves high output power and wide bandwidth with high integration level compared to state-of-the-art at F-band.
引用
收藏
页码:97 / 100
页数:4
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