Lead zirconate titanate behaviors in an LDMOS

被引：0

作者：

Zhai Ya-Hong ^{[1
]}

Li Wei ^{[1
]}

Li Ping ^{[1
]}

Li Jun-Hong ^{[1
]}

Hu Bin ^{[1
]}

Huo Wei-Rong ^{[1
]}

Fan Xue ^{[1
]}

Wang Gang ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 07期

基金：

中国国家自然科学基金;

关键词：

laterally diffused metal oxide semiconductor (LDMOS); lead zirconate titanate; memory behavior; retention; FIELD;

D O I：

10.1088/1674-1056/22/7/078501

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The behaviors of lead zirconate titanate (PZT) deposited as the dielectric for high-voltage devices are investigated experimentally and theoretically. The devices demonstrate not only high breakdown voltages above 350 V, but also excellent memory behaviors. A drain current-gate voltage (I-D-V-G) memory window of about 2.2 V is obtained at the sweep voltages of +/- 10 V for the 350-V laterally diffused metal oxide semiconductor (LDMOS). The retention time of about 270 s is recorded for the LDMOS through a controlled I-D-V-G measurement. The LDMOS with memory behaviors has potential to be applied in future power conversion circuits to boost the performance of the energy conversion system.

引用

页数：4

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