Lifetimes of excited levels for atomic silicon

被引：11
|
作者：
Ates, S. [1 ]
Ugurtan, H. H. [1 ]
机构：
[1] Selcuk Univ, Dept Phys, Fac Sci, TR-42049 Konya, Turkey
来源：
INDIAN JOURNAL OF PHYSICS | 2013年 / 87卷 / 01期
关键词：
Silicon atom; Lifetime; The weakest bound electron potential model theory; The quantum defect orbital theory; ABSOLUTE OSCILLATOR-STRENGTHS; TRANSITION-PROBABILITIES; SI-I; GENERATING VALENCE; SYSTEMATIC TRENDS; RYDBERG ORBITALS; QUANTUM-DEFECT; ISOELECTRONIC SEQUENCE; ALLOWED TRANSITIONS; RADIATIVE LIFETIMES;
D O I：
10.1007/s12648-012-0167-2
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The lifetimes of some excited levels for atomic silicon are calculated using the weakest bound electron potential model theory (WBEPMT) and the quantum defect orbital theory. In the WBEPMT framework, we have employed both numerical Coulomb Approximation wave functions and numerical non-relativistic Hartree-Fock wave functions for expectation values of radii. The obtained lifetime results have been compared with theoretical and experimental data in the literature.
引用
收藏
页码：9 / 17
页数：9
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