GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3 as Dielectric

被引：12

作者：

Dong, L. ^{[1
,2
]}

Wang, X. W. ^{[3
]}

Zhang, J. Y. ^{[1
,2
]}

Li, X. F. ^{[1
,2
]}

Gordon, R. G. ^{[3
]}

Ye, P. D. ^{[1
,2
]}

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

[3] Harvard Univ, Dept Chem & Chem Biol, Cambridge, MA 02138 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2013年 / 34卷 / 04期

关键词：

Atomic layer epitaxy (ALE); enhancement mode (E-mode); GaAs MOSFET; CHANNEL; MOSFETS;

D O I：

10.1109/LED.2013.2244058

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We demonstrate high-performance enhancement-mode (E-mode) GaAs NMOSFETs with an epitaxial gate dielectric layer of La1.8Y0.2O3 grown by atomic layer epitaxy (ALE) on GaAs(111) A substrates. A 0.5-mu m-gate-length device has a record-high maximum drain current of 336 mA/mm for surface-channel E-mode GaAs NMOSFETs, a peak intrinsic transconductance of 210 mS/mm, a subthreshold swing of 97 mV/dec, and an I-ON/I-OFF ratio larger than 10(7). The thermal stability of the single-crystalline La1.8Y0.2O3-single-crystalline GaAs interface is investigated by capacitance-voltage (C-V) and conductance-voltage (G-V) analysis. High-temperature annealing is found to be effective to reduce D-it.

引用

页码：487 / 489

页数：3

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