Low-temperature epitaxial growth of high quality Si1-xGex (x ≥ 0.99) films on Si(001) wafer by reactive thermal chemical vapor deposition

被引：6

作者：

Tao, Ke ^{[1
]}

Kurosawa, Yoshinori ^{[1
]}

Hanna, Jun-ichi ^{[1
]}

机构：

[1] Tokyo Inst Technol, Imaging Sci & Engn Lab, Yokohama, Kanagawa 2268503, Japan

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 18期

关键词：

GE LAYERS; GERMANIUM; SI; MICROELECTRONICS; SI2H6;

D O I：

10.1063/1.4804362

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Epitaxial growth of silicon-germanium (Si1-xGex: 0 <= x <= 1) thin films on Si(001) substrate at low temperature has been investigated using reactive thermal CVD. Si2H6 and GeF4 are used as source gases. The results indicate that Si1-xGex (x >= 0.99) epilayer can be prepared directly on Si wafer at 350 degrees C with the degree of strain relaxation up to 98.5%. Etching reaction between GeF4 and the growth surface plays an important role in both improving the crystal quality and suppressing the propagation of dislocations. High quality epitaxial Si1-xGex has been fabricated with a threading dislocation density of similar to 7.0 x 10(5) cm(-2) and RMS roughness of 1.44 nm. (C) 2013 AIP Publishing LLC.

引用

页数：5

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