Use of Half Metallic Hensler Alloys in CoFeB/MgO/Heusler Alloy Tunnel Junctions

被引：13

作者：

Chen, P. J. ^{[1
]}

Feng, G. ^{[1
]}

Shull, R. D. ^{[1
]}

机构：

[1] NIST, Magnet Mat Grp, Gaithersburg, MD 20899 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2013年 / 49卷 / 07期

关键词：

Co-based heusler alloys; magnetic tunnel junctions; MgO/CoFeB; ROOM-TEMPERATURE; MAGNETORESISTANCE;

D O I：

10.1109/TMAG.2013.2244584

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Hensler Alloys Co2FeSi and Co2MnSi were deposited on both single crystal MgO (100) and polycrystalline SiO2 silicon thermal oxide substrates and characterized by x-ray diffraction before and after thermal annealing at various temperatures. Co2FeSi and Co2MnSi deposited on MgO (100) grow as L2(1) or B2 structures but grow as an A2 structure on the SiO2 substrate. Co2FeSi and Co2MnSi were also deposited in a magnetic tunnel junction (MTJ) stack as the free and reference layers above and below the MgO barrier layer respectively, thereby replacing Co20Fe60B20 as those layers in the more common MTJ stack. The tunneling magnetoresistance (TMR) ratio is higher if Co2FeSi is the free layer, but lower when Co2FeSi is the reference layer.

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页码：4379 / 4382

页数：4

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