Epitaxial ferromagnetic Fe3Si/Si(111) structures with high-quality heterointerfaces

被引：88

作者：

Hamaya, K. ^{[1
]}

Ueda, K. ^{[1
]}

Kishi, Y. ^{[1
]}

Ando, Y. ^{[1
]}

Sadoh, T. ^{[1
]}

Miyao, M. ^{[1
]}

机构：

[1] Kyushu Univ, Dept Elect, Fukuoka 8190395, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 13期

关键词：

D O I：

10.1063/1.2996581

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To develop silicon-based spintronic devices, we have explored high-quality ferromagnetic Fe(3)Si/silicon (Si) structures. Using low-temperature molecular beam epitaxy at 130 C, we realize the epitaxial growth of ferromagnetic Fe(3)Si layers on Si (111) with an abrupt interface, and the grown Fe(3)Si layer has the ordered DO(3) phase. Measurements of magnetic and electrical properties for the Fe(3)Si/Si (111) yield a magnetic moment of similar to 3.16 mu(B)/f.u. at room temperature and a rectifying Schottky-diode behavior with the ideality factor of similar to 1.08, respectively. (C) 2008 American Institute of Physics.

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