Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Revere Recovery Characteristic and Low Switching Loss

被引：28

作者：

An, Junjie ^{[1
]}

Hu, Shengdong ^{[2
,3
]}

机构：

[1] Fuji Elect Co Ltd, Device Dev Dept, Dev Div, Nagano 3900821, Japan

[2] Chongqing Univ, Coll Commun Engn, Minist Educ, Key Lab Dependable Serv Comp Cyber Phys Soc, Chongqing 400044, Peoples R China

[3] Chongqing Univ, Coll Commun Engn, Chongqing Engn Lab High Performance Integrated Ci, Chongqing 400044, Peoples R China

来源：

IEEE ACCESS | 2019年 / 7卷

基金：

中国国家自然科学基金;

关键词：

Silicon carbide; heterojunction diode; high breakdown voltage; low on-state resistance; low switching loss;

D O I：

10.1109/ACCESS.2019.2902246

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

A split-gate SiC trench MOSFET with a hetero-junction diode (HJD) is proposed and numerically analyzed in this paper. The proposed structure features the HJD to effectively suppress the turn-on of the parasitic body diode and reduce the depletion region in the JEST area. A P+ shielding layer surrounding the HJD and the gate oxide layer is used to alleviate the concentration of the electric field under the gate trench and improve the switching performance. As a result, not only the breakdown voltage is increased by 20.8% at the same level of the on-state resistance but also the miller charge and the switching loss of the proposed structure are reduced by 52% and 39.1%, respectively when compared with those of the conventional SiC trench MOSFET.

引用

页码：28592 / 28596

页数：5

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