AlGaN/GaN HEMT's photoresponse to high intensity THz radiation

被引：7

作者：

Dyakonova, N. ^{[1
]}

But, D. B. ^{[1
]}

Coquillat, D. ^{[1
]}

Knap, W. ^{[1
]}

Drexler, C. ^{[2
]}

Olbrich, P. ^{[2
]}

Karch, J. ^{[2
]}

Schafberger, M. ^{[2
]}

Ganichev, S. D. ^{[2
]}

Ducournau, G. ^{[3
]}

Gaquiere, C. ^{[3
]}

Poisson, M. -A. ^{[4
]}

Delage, S. ^{[4
]}

Cywinski, G. ^{[5
]}

Skierbiszewski, C. ^{[5
]}

机构：

[1] Univ Montpellier 2, CNRS, L2C, UMR 5221, F-34095 Montpellier, France

[2] Univ Regensburg, Terahertz Ctr, D-93053 Regensburg, Germany

[3] CNRS, Inst Elect & Microelect Nord, UMR 8520, F-59652 Villeneuve Dascq, France

[4] Thales Thales Res & Technol, F-91404 Orsay, France

[5] Unipress, PAS, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

OPTO-ELECTRONICS REVIEW | 2015年 / 23卷 / 03期

关键词：

terahertz; photoresponse; HEMT; ALGaN/GaN; TERAHERTZ RADIATION;

D O I：

10.1515/oere-2015-0026

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm(2). The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.

引用

页码：195 / 199

页数：5

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