Spin engineering of carrier-induced magnetic ordering in (Cd,Mn)Te quantum wells

被引：14
作者：
Kossacki, P
Pacuski, W
Maslana, W
Gaj, JA
Bertolini, M
Ferrand, D
Tatarenko, S
Cibert, J
机构：
[1] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
[2] Univ Grenoble 1, CNRS, CEA, Joined Grp Nanphys & Semicond, Grenoble, France
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 21卷 / 2-4期
关键词：
diluted magnetic semiconductors; ferromagnetic semiconductors; heterostructures;
D O I：
10.1016/j.physe.2003.11.154
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Properties of carrier-induced ferromagnetism in modulation-doped quantum wells of p-type (Cd,Mn)Te are studied by photoluminescence and reflectivity in magnetic field. Valence-band engineering can strongly modify the magnetic properties of a system of localized spins interacting via a 2D hole gas. This is obtained through a strain control of the light-hole (lh)/ heavy-hole (hh) splitting. The axis of easy magnetization can be turned from the growth direction (with a hh gas) to be in-plane (lh gas). It is also,found that the strong alloy fluctuations in (Cd,Mn)Te quantum wells containing about 10% of Mn ions are strong enough to significantly modify the magnetic state of the coupled ion-carrier system. A similar effect is observed at moderate Mn content, by restoring the lh/hh degeneracy. (C) 2003 Elsevier B.V. All rights reserved.
引用
收藏
页码：943 / 946
页数：4
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