Low depinning fields in Ta-CoFeB-MgO ultrathin films with perpendicular magnetic anisotropy

被引：91

作者：

Burrowes, C. ^{[1
,2
]}

Vernier, N. ^{[1
,2
]}

Adam, J. -P. ^{[1
,2
]}

Diez, L. Herrera ^{[1
,2
]}

Garcia, K. ^{[1
,2
]}

Barisic, I. ^{[1
,2
]}

Agnus, G. ^{[1
,2
]}

Eimer, S. ^{[1
,2
]}

Kim, Joo-Von ^{[1
,2
]}

Devolder, T. ^{[1
,2
]}

Lamperti, A. ^{[3
]}

Mantovan, R. ^{[3
]}

Ockert, B. ^{[4
]}

Fullerton, E. E. ^{[5
]}

Ravelosona, D. ^{[1
,2
]}

机构：

[1] Univ Paris 11, Inst Elect Fondamentale, F-91405 Orsay, France

[2] UMR CNRS 8622, F-91405 Orsay, France

[3] IMM CNR, Lab MDM, I-20864 Agrate Brianza, MB, Italy

[4] Singulus Technol AG, D-63796 Kahl, Germany

[5] Univ Calif San Diego, Ctr Magnet Recording Res, La Jolla, CA 92093 USA

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 18期

基金：

美国国家科学基金会;

关键词：

24;

D O I：

10.1063/1.4826439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the domain- wall dynamics in Ta-CoFeB-MgO ultra-thin films with perpendicular magnetic anisotropy for various Co and Fe concentrations in both the amorphous and crystalline states. We observe three motion regimes with increasing magnetic field, which are consistent with a low fields creep, transitory depinning, and high fields Walker wall motion. The depinning fields are found to be as low as 2mT, which is significantly lower than the values typically observed in 3d ferromagnetic metal films with perpendicular magnetic anisotropy. This work highlights a path toward advanced spintronics devices based on weak random pinning in perpendicular CoFeB films. (c) 2013 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

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