Influence of Li-B-Si Additions on the Sintering and Microwave Dielectric Properties of Ba-Nd-Ti Ceramics

被引：34

作者：

Li, Enzhu ^{[1
]}

Duan, Shuxin ^{[1
]}

Sun, Shumeng ^{[1
]}

Li, Hao ^{[1
]}

Mi, Yuean ^{[1
]}

Zhou, Xiaohua ^{[1
]}

Zhang, Shuren ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 12期

关键词：

BaO-Nd2O3-TiO2; LTCC; Li2O-B2O3-SiO2 (LBS); microwave dielectric ceramics; GLASS ADDITIONS; BAO-LN(2)O(3)-TIO2 LN; TEMPERATURE; PERMITTIVITY; COMPOSITES; RESONATORS;

D O I：

10.1007/s11664-013-2731-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Li2O-B2O3-SiO2 (LBS) synthesized via a solid-state reaction process was chosen as a novel sintering aid for tungsten-bronze-type Ba4Nd9.3Ti18O54 (BNT) ceramic. The effects of LBS additions on the sintering behaviors, microstructures, and microwave dielectric properties of the BNT ceramic have been investigated, indicating that LBS addition obviously lowered the sintering temperature of the BNT ceramic without damaging its microwave dielectric properties. BNT ceramic doped with 3 wt.% and 4 wt.% LBS addition could be well sintered at 975A degrees C and 950A degrees C for 3 h and had excellent properties: epsilon (r) = 65.99, Q x f = 4943 GHz (f = 4.4 GHz), tau (f) = 19 ppm/A degrees C, and epsilon (r) = 64.56, Q x f = 4929 GHz (f = 4.3 GHz), tau (f) = 11 ppm/A degrees C, respectively.

引用

页码：3519 / 3523

页数：5

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