Influence of O and C co-implantation on the lattice site of Er in GaN

被引：13

作者：

De Vries, B

Matias, V

Vantomme, A

Wahl, U

Rita, EMC

Alves, E

Lopes, AML

Correia, JG

机构：

[1] Katholieke Univ Leuven, Inst Kern & Stralingsfys, B-3001 Louvain, Belgium

[2] Inst Tecnol & Nucl, P-2686953 Sacavem, Portugal

[3] Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal

[4] CERN, EP, CH-1211 Geneva 23, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 21期

关键词：

D O I：

10.1063/1.1756196

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The lattice location of low-dose implanted Er in GaN, GaN:O, and GaN:C was investigated using the emission channeling technique. The conversion electrons emitted by the probe isotope Er-167m give direct evidence that the majority (approximate to90%) of Er atoms are located on substitutional Ga sites for all samples. Annealing up to 900degreesC does not change these fractions, although it reduces the Er root-mean-square (rms) displacements. The only visible effect of oxygen or carbon doping is a small increase in the rms displacements with respect to the undoped sample. (C) 2004 American Institute of Physics.

引用

页码：4304 / 4306

页数：3

共 17 条

[1] High temperature annealing of Er implanted GaN [J].

Alves, E ;

Monteiro, T ;

Soares, J ;

Santos, L ;

da Silva, MF ;

Soares, JC ;

Lojkowski, W ;

Kolesnikov, D ;

Vianden, R ;

Correia, JG .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 81 (1-3) :132-135

[2] Ion beam and photoluminescence studies of Er and O implanted GaN [J].

Alves, E ;

da Silva, MF ;

Soares, JC ;

Vianden, R ;

Bartels, J ;

Kozanecki, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 147 (1-4) :383-387

[3] Local structure and bonding of Er in GaN: A contrast with Er in Si [J].

Citrin, PH ;

Northrup, PA ;

Birkhahn, R ;

Steckl, AJ .

APPLIED PHYSICS LETTERS, 2000, 76 (20) :2865-2867

[4]

Dalmer M, 1998, MATER RES SOC SYMP P, V482, P1021

[5] Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 μm [J].

Davydov, VY ;

Lundin, VV ;

Smirnov, AN ;

Sobolev, NA ;

Usikov, AS ;

Emel'yanov, AM ;

Makoviichuk, MI ;

Parshin, EO .

SEMICONDUCTORS, 1999, 33 (01) :1-5

[6] EMISSION CHANNELING AND BLOCKING [J].

HOFSASS, H ;

LINDNER, G .

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS, 1991, 201 (03) :121-183

[7] Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN [J].

Kim, S ;

Rhee, SJ ;

Turnbull, DA ;

Li, X ;

Coleman, JJ ;

Bishop, SG ;

Klein, PB .

APPLIED PHYSICS LETTERS, 1997, 71 (18) :2662-2664

[8] IMPURITY ENHANCEMENT OF THE 1.54-MU-M ER3+ LUMINESCENCE IN SILICON [J].

MICHEL, J ;

BENTON, JL ;

FERRANTE, RF ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

FITZGERALD, EA ;

XIE, YH ;

POATE, JM ;

KIMERLING, LC .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (05) :2672-2678

[9] Green, red and infrared Er-related emission in implanted GaN:Er and GaN:Er,O samples [J].

Monteiro, T ;

Soares, J ;

Correia, MR ;

Alves, E .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6183-6188

[10] Effect of carbon doping on GaN:Er [J].

Overberg, M ;

Abernathy, CR ;

MacKenzie, JD ;

Pearton, SJ ;

Wilson, RG ;

Zavada, JM .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 81 (1-3) :121-126

← 1 2 →