Thick GaN epitaxial growth with low dislocation density by hydride vapor phase epitaxy

被引：712

作者：

Usui, A ^{[1
]}

Sunakawa, H ^{[1
]}

Sakai, A ^{[1
]}

Yamaguchi, AA ^{[1
]}

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA,IBARAKI 305,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1997年 / 36卷 / 7B期

关键词：

GaN; vapor phase epitaxy; sapphire; dislocation; photoluminescence; selective growth; facet;

D O I：

10.1143/JJAP.36.L899

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thick GaN layers were sown by hydride vapor phase epitaxy (HVPE) with the aim of using these layers as a homoepitaxial substrate to improve device quality of laser diodes or light emitting diodes. HVPE is very useful for thick layer growth since the growth rate can reach from several ten up to one hundred micron per hour, In this experiment, the growth began as selective growth through openings formed in a SiO2 mask. Facets consisting of {1 (1) over bar 01} planes were formed in the early stage and a continuous film developed from the coalescence of these facets on the SiO2 mask. As a result, GaN layers with a dislocation density as low as 6 x 10(7) cm(-2) were grown on 2-inch-diameter sapphire wafers. These GaN layers were crack-free and had mirror-like surface.

引用

页码：L899 / L902

页数：4

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