GaN IC E-mode p-channel and n-channel transistors simulation

被引：0

作者：

Egorkin, V. I. ^{[1
]}

Zemlyakov, V. E. ^{[1
]}

Zaitsev, A. A. ^{[1
]}

Chukanova, O. B. ^{[1
]}

机构：

[1] Natl Res Univ Elect Technol, Moscow, Russia

来源：

ST PETERSBURG POLYTECHNIC UNIVERSITY JOURNAL-PHYSICS AND MATHEMATICS | 2022年 / 15卷 / 03期

关键词：

GaN; high electron mobility transistor; normally-off transistor; complementary pair; integrated circuit;

D O I：

10.18721/JPM.153.325

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This article demonstrates TCAD simulation of normally-off p-channel , n-channel transistors based on a p-GaN gate power platform and estimates interconnections between the key parameters of the heterostructure and device behavior, in other words the type of transistor. GaN platform with p-GaN layer has been developed. It will allow to form n-channel and p-channel, normally-on and normally-off transistors on the same wafer in the same technological cycle and to create GaN complementary pair.

引用

页码：134 / 137

页数：4

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