Controllable growth of triangular hexagonal boron nitride domains on copper foils by an improved low-pressure chemical vapor deposition method

被引：74

作者：

Guo, Ning ^{[1
]}

Wei, Jinquan ^{[1
]}

Fan, Lili ^{[1
]}

Jia, Yi ^{[1
]}

Liang, Dayao ^{[1
]}

Zhu, Hongwei ^{[1
]}

Wang, Kunlin ^{[1
]}

Wu, Dehai ^{[1
]}

机构：

[1] Tsinghua Univ, Dept Mech Engn, Minist Educ China, Key Lab Adv Mat Proc Technol, Beijing 100084, Peoples R China

来源：

NANOTECHNOLOGY | 2012年 / 23卷 / 41期

基金：

中国国家自然科学基金;

关键词：

MONOLAYER; NANOTUBES; NI(111); FILMS; LAYER;

D O I：

10.1088/0957-4484/23/41/415605

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate an improved low-pressure chemical vapor deposition method to fabricate hexagonal boron nitride (h-BN) domains of a few layers (one-four layers) from ammonia borane by adding a small quartz tube to stabilize the gas flow over the copper substrate and reducing the growing rate of h-BN. The h-BN grows freely and spontaneously to form triangular domains on the Cu (100) plane. The triangular domains are prone to be parallel to each other on the copper substrate. The h-BN domains grow by extending in the normal direction of the triangle and form a large thin film by joining together. Both the size and coverage rate on Cu foils are well controlled by tuning the amount of ammonia borane.

引用

页数：6

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