Electric field control of domain wall propagation in Pt/Co/GdOx films

被引：72
作者：
Bauer, Uwe [1 ]
Emori, Satoru [1 ]
Beach, Geoffrey S. D. [1 ]
机构：
[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
来源：
APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 19期
基金：
美国国家科学基金会;
关键词：
MAGNETIC-ANISOTROPY; ATOMIC LAYERS; MEMORY;
D O I：
10.1063/1.4712620
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of a gate voltage on domain wall (DW) propagation is investigated in ultrathin Pt/Co/gadolinium oxide (GdOx) films with perpendicular magnetic anisotropy. The DW propagation field can be enhanced or retarded by an electric field at the Co/GdOx interface and scales linearly with gate voltage up to moderate bias levels. Higher gate voltage levels, corresponding to electric fields >0.2V/nm, produce a large irreversible change to the magnetic anisotropy that can enable nonvolatile switching of the coercivity. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712620]
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页数：4
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