Electric field control of domain wall propagation in Pt/Co/GdOx films

被引：72

作者：

Bauer, Uwe ^{[1
]}

Emori, Satoru ^{[1
]}

Beach, Geoffrey S. D. ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2012年 / 100卷 / 19期

基金：

美国国家科学基金会;

关键词：

MAGNETIC-ANISOTROPY; ATOMIC LAYERS; MEMORY;

D O I：

10.1063/1.4712620

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of a gate voltage on domain wall (DW) propagation is investigated in ultrathin Pt/Co/gadolinium oxide (GdOx) films with perpendicular magnetic anisotropy. The DW propagation field can be enhanced or retarded by an electric field at the Co/GdOx interface and scales linearly with gate voltage up to moderate bias levels. Higher gate voltage levels, corresponding to electric fields >0.2V/nm, produce a large irreversible change to the magnetic anisotropy that can enable nonvolatile switching of the coercivity. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4712620]

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