Optical properties and carrier dynamics of polarity controlled ZnO films grown on (0001) Al2O3 by Cr-compound intermediate layers

被引：3

作者：

Kwon, Bong-Joon ^{[1
,2
]}

Sun, Yuanping ^{[1
]}

Chung, Jean Soo ^{[2
]}

Cho, Yong-Hoon ^{[1
]}

Park, J. S. ^{[3
]}

Yao, T. ^{[3
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Phys, Natl Res Lab Nanobiophoton, Taejon 305701, South Korea

[2] Chungbuk Natl Univ, Dept Phys, Cheongju 361763, South Korea

[3] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期

基金：

瑞典研究理事会;

关键词：

chromium compounds; excitons; II-VI semiconductors; photoluminescence; semiconductor thin films; time resolved spectra; zinc compounds;

D O I：

10.1063/1.3077154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on optical properties and carrier dynamics of polarity controlled ZnO films grown on (0001) Al2O3 by Cr-compound intermediate layers using photoluminescence (PL), PL excitation, temperature dependent PL, and time-resolved PL techniques. At low temperature, a dominant donor-bound exciton peak at 3.36 eV has been observed in the O-polar ZnO grown on Cr2O3 intermediate layer, while a dominant acceptor-bound exciton peak at 3.32 eV has been observed in the Zn-polar ZnO grown on CrN intermediate layer. Native defects and/or impurities introduced by the Cr-compound intermediate layers play an important role in the optical properties of the polar ZnO samples.

引用

页数：3

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