Structural, optical and electrical characterization of ITO, ITO/Ag and ITO/Ni transparent conductive electrodes

被引：33
作者：
Ali, Ahmad Hadi [1 ,2 ]
Shuhaimi, Ahmad [3 ]
Hassan, Zainuriah [1 ]
机构：
[1] Univ Sains Malaysia, Nanooptoelect Res & Technol Lab, Sch Phys, George Town, Malaysia
[2] Univ Tun Hussein Onn Malaysia, Dept Sci, Fac Sci Technol & Human Dev, Johor Baharu, Malaysia
[3] Univ Malaya, Dept Phys, Low Dimens Mat Res Ctr, Fac Sci, Kuala Lumpur 59100, Malaysia
来源：
APPLIED SURFACE SCIENCE | 2014年 / 288卷
关键词：
ITO; ITO/Ag; ITO/Ni; Sputtering; Transparent conductive oxides; LIGHT-EMITTING-DIODES; OXIDE THIN-FILMS; PHYSICAL-PROPERTIES; OHMIC CONTACTS; TIN; TEMPERATURE; IMPROVEMENT; GAN; MICROSTRUCTURE; INTERFACE;
D O I：
10.1016/j.apsusc.2013.10.079
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
We report on the transparent conductive oxides (TCO) characteristics based on the indium tin oxides (ITO) and ITO/metal thin layer as an electrode for optoelectronics device applications. ITO, ITO/Ag and ITO/Ni were deposited on Si and glass substrate by thermal evaporator and radio frequency (RF) magnetron sputtering at room temperature. Post deposition annealing was performed on the samples in air at moderate temperature of 500 degrees C and 600 degrees C. The structural, optical and electrical properties of the ITO and ITO/metal were characterized using X-ray diffraction (XRD), UV-Vis spectrophotometer, Hall effect measurement system and atomic force microscope (AFM). The XRD spectrum reveals significant polycrystalline peaks of ITO (2 2 2) and Ag (1 1 1) after post annealing process. The post annealing also improves the visible light transmittance and electrical resistivity of the samples. Figure of merit (FOM) of the ITO, ITO/Ag and ITO/Ni were determined as 5.5 x 10(-3) Omega(-1), 8.4 x 10(-3) Omega(-1) and 3.0 x 10(-5) Omega(-1), respectively. The results show that the post annealed ITO with Ag intermediate layer improved the efficiency of the transparent conductive electrodes (TCE) as compared to the ITO and ITO/Ni. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：599 / 603
页数：5
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