193 lithography and RELACSTM processing for BEOL lithography

被引：7

作者：

Della Guardia, R ^{[1
]}

Petrillo, K ^{[1
]}

Chen, J ^{[1
]}

Rabidoux, P ^{[1
]}

Dalton, T ^{[1
]}

Holmes, S ^{[1
]}

Hadel, L ^{[1
]}

Malone, K ^{[1
]}

Mahorowala, A ^{[1
]}

Greco, S ^{[1
]}

Ferguson, R ^{[1
]}

机构：

[1] IBM Corp, Adv Semicond Technol Ctr, Hopewell Jct, NY USA

来源：

OPTICAL MICROLITHOGRAPHY XIV, PTS 1 AND 2 | 2001年 / 4346卷

关键词：

lithography; image shortening; optical proximity correction; 193nm lithography; process window improvement; resolution enhancement; RELACS; contact hole printing;

D O I：

10.1117/12.435636

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents data obtained in developing a process using 193 nm lithography and the RELACS contact hole shrink technique. For the line/space levels, process windows showing resist performance using chrome on glass masks are presented. Data showing feature size linearity and the requirements for optical proximity correction (OPC) are presented. Some of the OPC trends observed are discussed and compared to results obtained using 248nm lithography. Image shortening data also compares the results obtained in 193 and 248 lithography. Etch results for the new 193 resists are given and show the etch resistance of this relatively new class of photoresist materials. For contact hole and via levels, results using 193 lithography and COG masks show the importance of the mask error enhancement factor (MEEF), print bias and resolution. Due to the relative immaturity and performance of contact hole resists for 193 lithography, Clariant's RELACS process was investigated with 248nm resists. In this process contact holes are printed larger than required and then reduced to the desired size by a chemical shrink process. Results obtained with 248 lithography using state of the art resists and phase shift masks are discussed. It was found that 140nm contact holes with at least 0.5um depth of focus could be obtained. Cross sections and process windows are shown.

引用

页码：1029 / 1040

页数：12