X-band 10W MMIC High-Gain Power Amplifier with up to 60% PAE

被引：0

作者：

Sardin, David ^{[1
]}

Reveyrand, Tibault ^{[1
]}

Popovic, Zoya ^{[1
]}

机构：

[1] Univ Colorado, Dept Elect Comp & Energy Engn ECEE, Boulder, CO 80309 USA

来源：

2014 9TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE (EUMIC) | 2014年

关键词：

Power Amplifiers; Gallium Nitride; high efficiency; MMIC; X-band;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a power amplifier operating at X-band demonstrating 61% power added efficiency (PAE) at 10 GHz associated with 14W output power in CW mode. The design uses a 0.15 mu m GaN 3MI process from TriQuint (TM). The devices operate at a peak power density of 3.8W/mm at 10 GHz with a PAE higher than 48% over a 500-MHz bandwidth. The two-stage MMIC PA has a saturated gain of 19 dB at peak efficiency. The total size of the chip is 9.2mm(2).

引用

页码：393 / 396

页数：4

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