Electronic properties of twisted trilayer graphene

被引:77
作者
Suarez Morell, E. [1 ]
Pacheco, M. [1 ]
Chico, L. [2 ]
Brey, L. [2 ]
机构
[1] Univ Tecn Federico Santa Maria, Dept Fis, Valparaiso, Chile
[2] CSIC, ICMM, Dept Teoria & Simulac Mat, E-28049 Madrid, Spain
关键词
D O I
10.1103/PhysRevB.87.125414
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We study the electronic properties of a twisted trilayer graphene, where two of the layers have Bernal stacking and the third one has a relative rotation with respect to the AB-stacked layers. Near the Dirac point, the AB-twisted trilayer graphene spectrum shows two parabolic Bernal-like bands and a twistedlike Dirac cone. For small twist angles, the parabolic bands present a gap that increases for decreasing rotation angle. There is also a shift in the twistedlike Dirac cone with a similar angle dependence. We correlate the gap in the trilayer with the shift of the Dirac cone in an isolated twisted bilayer, which is due to the loss of electron-hole symmetry caused by sublattice mixing in the rotated geometry. Using a tight-binding and a continuum model, we derive an effective Hamiltonian which accounts for the relevant low-energy properties of this system. DOI: 10.1103/PhysRevB.87.125414
引用
收藏
页数:7
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