Metal silicon multilayers produced by low-temperature MOCVD

被引：0

作者：

Hamelmann, F ^{[1
]}

Haindl, G ^{[1
]}

Klipp, A ^{[1
]}

Majkova, E ^{[1
]}

Kleineberg, U ^{[1
]}

Jutzi, P ^{[1
]}

Heinzmann, U ^{[1
]}

机构：

[1] Univ Bielefeld, Dept Phys, D-33615 Bielefeld, Germany

来源：

PROPERTIES AND PROCESSING OF VAPOR-DEPOSITED COATINGS | 1999年 / 555卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

W/Si and Mo/Si multilayers with 20 periods (doublelayer spacing d = 24nm) were deposited on silicon substrates using (remote-) plasma-enhanced MOCVD. The substrate temperature was below 200 degrees C, which is necessary to avoid interdiffusion of the layers. The layer thickness and growth was controlled by an in situ soft x-ray reflectivity measurement. The characterisation of the multilayers showed an excellent growth of the silicon layers, while the metal layers are rough with embedded crystallites.

引用

页码：19 / 24

页数：6

共 18 条

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