Efficient Incorporation of Mg in Solution Grown GaN Crystals

被引：11

作者：

Freitas, Jaime A., Jr. ^{[1
]}

Feigelson, Boris N. ^{[1
]}

Anderson, Travis J. ^{[1
]}

机构：

[1] Naval Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS EXPRESS | 2013年 / 6卷 / 11期

关键词：

ATMOSPHERIC-PRESSURE; SINGLE-CRYSTALS; FABRICATION; EPITAXY;

D O I：

10.7567/APEX.6.111001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Detailed spectrometry and optical spectroscopy studies carried out on GaN crystals grown in solution detect and identify Mg as the dominant shallow acceptor. Selective etching of crystals with higher Mg levels than that of the donor concentration background indicates that Mg acceptors incorporate preferentially in the N-polar face. Electrical transport measurements verified an efficient incorporation and activation of the Mg acceptors. These results suggest that this growth method has the potential to produce p-type doped epitaxial layers or p-type substrates characterized by high hole concentration and low defect density. (C) 2013 The Japan Society of Applied Physics

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页数：4

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