Migration of defect clusters and xenon-vacancy clusters in uranium dioxide

被引:2
|
作者
Chen Dong [1 ,2 ,3 ]
Gao Fei
Deng Hui-Qiu [3 ]
Liu Bo [1 ]
Hu Wang-Yu [3 ]
Sun Xin [2 ]
机构
[1] Henan Univ, Inst Photobiophys, Dept Phys & Elect, Kaifeng 475004, Peoples R China
[2] Pacific NW Natl Lab, Richland, WA 99352 USA
[3] Hunan Univ, Dept Appl Phys, Changsha 410082, Hunan, Peoples R China
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 2014年 / 28卷 / 18期
基金
中国国家自然科学基金;
关键词
Defect clusters; migration mechanism; minimum energy paths; vacancy-assisted mechanism; SADDLE-POINTS; UO2; DIFFUSION; DYNAMICS; HELIUM; TEM; XE;
D O I
10.1142/S0217979214501203
中图分类号
O59 [应用物理学];
学科分类号
摘要
The possible transition states, minimum energy paths (MEPs) and migration mechanisms of defect clusters and xenon-vacancy defect clusters in uranium dioxide (UO2) have been investigated using the dimer and the nudged elastic-band (NEB) methods. The nearby O atom can easily hop into the oxygen vacancy position by overcoming a small energy barrier, which is much lower than that for the migration of a uranium vacancy. A simulation for a vacancy cluster consisting of two oxygen vacancies reveals that the energy barrier of the divacancy migration tends to decrease with increasing the separation distance of divacancy. For an oxygen interstitial, the migration barrier for the hopping mechanism is almost three times larger than that for the exchange mechanism. Xe moving between two interstitial sites is unlikely a dominant migration mechanism considering the higher energy barrier. A net migration process of a Xe-vacancy pair containing an oxygen vacancy and a xenon interstitial is identified by the NEB method. We expect the oxygen vacancy-assisted migration mechanism to possibly lead to a long distance migration of the Xe interstitials in UO2. The migration of defect clusters involving Xe substitution indicates that Xe atom migrating away from the uranium vacancy site is difficult.
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收藏
页数:13
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