Evidence of deep traps in overgrown v-shaped defects in epitaxial GaN layers

被引:9
作者
Weidlich, P. H. [1 ]
Schnedler, M. [1 ]
Eisele, H. [2 ]
Strauss, U. [3 ]
Dunin-Borkowski, R. E. [1 ]
Ebert, Ph [1 ]
机构
[1] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany
[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany
[3] OSRAM Optosemicond GmbH, D-93055 Regensburg, Germany
关键词
MULTIPLE-QUANTUM WELLS; VAPOR-PHASE EPITAXY; THICK GAN; GROWTH; SEMICONDUCTOR; SURFACES; HVPE;
D O I
10.1063/1.4816969
中图分类号
O59 [应用物理学];
学科分类号
摘要
The geometric and electronic structure of overgrown v-shaped defects in GaN epitaxial layers are investigated by cross-sectional scanning tunneling microscopy and spectroscopy. The v-defects are found to be hexagonal pit structures delimited by six {11 (2) over bar2} planes. The electronic properties are inhomogeneous. In some areas the center of the v-defects exhibits a strongly inhibited tunneling current, indicating the presence of deep traps. (C) 2013 AIP Publishing LLC.
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页数:4
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