Evidence of deep traps in overgrown v-shaped defects in epitaxial GaN layers

被引：9

作者：

Weidlich, P. H. ^{[1
]}

Schnedler, M. ^{[1
]}

Eisele, H. ^{[2
]}

Strauss, U. ^{[3
]}

Dunin-Borkowski, R. E. ^{[1
]}

Ebert, Ph ^{[1
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[2] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[3] OSRAM Optosemicond GmbH, D-93055 Regensburg, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 103卷 / 06期

关键词：

MULTIPLE-QUANTUM WELLS; VAPOR-PHASE EPITAXY; THICK GAN; GROWTH; SEMICONDUCTOR; SURFACES; HVPE;

D O I：

10.1063/1.4816969

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The geometric and electronic structure of overgrown v-shaped defects in GaN epitaxial layers are investigated by cross-sectional scanning tunneling microscopy and spectroscopy. The v-defects are found to be hexagonal pit structures delimited by six {11 (2) over bar2} planes. The electronic properties are inhomogeneous. In some areas the center of the v-defects exhibits a strongly inhibited tunneling current, indicating the presence of deep traps. (C) 2013 AIP Publishing LLC.

引用

页数：4

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