Analysis of the photoluminescence spectra of Cd x Hg1-x te heteroepitaxial structures with potential and quantum wells grown by molecularbeam epitaxy

被引：16

作者：

Voitsekhovskii, A. V. ^{[1
]}

Gorn, D. I.

Izhnin, I. I. ^{[2
]}

Izhnin, A. I. ^{[2
]}

Goldin, V. D. ^{[1
]}

Mikhailov, N. N. ^{[3
]}

Dvoretskii, S. A. ^{[3
]}

Sidorov, Yu G. ^{[3
]}

Yakushev, M. V. ^{[3
]}

Varavin, V. S. ^{[3
]}

机构：

[1] Natl Res Tomsk State Univ, Sci Res Inst Appl Math & Mech, Tomsk, Russia

[2] SPE Karat, Lvov, Ukraine

[3] Russian Acad Sci, Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

RUSSIAN PHYSICS JOURNAL | 2013年 / 55卷 / 08期

关键词：

photoluminescence; MBE MCT; quantum well; band diagram;

D O I：

10.1007/s11182-013-9900-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A theoretical model for description of the band diagram and the photoluminescence spectra of heteroepitaxial structures (HES) based on Cd (x) Hg1-x Te (MCT) with potential and quantum wells (QW) grown by molecularbeam epitaxy (MBE) is developed. A special feature of the model is that the model takes into account the dependence of electron affinity on the MCT composition and temperature as well as the dependence of the electron concentration in intrinsic MCT and hole concentration in vacancy-doped MCT. The calculations are made and the results are compared with the experimental photoluminescence spectra of various structures with QW reported in the literature.

引用

页码：910 / 916

页数：7

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