Room temperature point defect migration in crystalline Si

Aim of this paper is to elucidate some fundamental aspects of point defect migration in crystalline Si. Deep level transient spectroscopy (DLTS), and in-situ leakage current measurements were used to fully characterise the RT stable point defects introduced by Si and He implantation. keV or MeV energies were used to doses in the range 1 x 10(8) - 1 x 10(12) cm(-2) on p- and n-type epitaxial (epi) and Czochralski (CZ) Si samples. Both ex-situ and in-situ techniques provide useful information on defect formation and diffusion in Si and, when combined, allowed us to conclude that the stable defects concentration and the defect migration length are strongly affected by the impurity content, due to the defect-impurity interaction. Moreover, room temperature diffusivities of similar to2 x 10(-15) cm(2)/s and similar to4.0 x 10(-13) cm(2)/s were found for I and V, respectively. Finally, leakage current measurements performed during He ion implantation demonstrate that defect generation is roughly linear in all the measured range.