Creation of P-b interface defects in thermal Si/SiO2 through annealing - Comment - Reply

被引：3
|
作者：
Stesmans, A
Afanas'ev, VV
机构：
来源：
JOURNAL OF PHYSICS-CONDENSED MATTER | 1997年 / 9卷 / 15期
关键词：
111; SI-SIO2; INTERFACE; DISSOCIATION KINETICS; DIPOLAR INTERACTIONS; CENTERS;
D O I：
10.1088/0953-8984/9/15/020
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Regarding the electron spin resonance work (Stesmans and Afanas'ev (1996) J. Phys.: Condens. Matter 8 L505) reporting on a newly resolved P-b interface defect generation mechanism operative during postoxidation annealing in inert ambient above similar to 640 degrees C, Stathis (J. Phys.: Condens. Matter 9 3297) criticizes that no explanation has been offered for this finding vis-a-vis apparently deviating previous work. Additionally, it is insinuated that previous crucial P-b results have been obtained only after postoxidation annealing. We show these comments to be based on the overlooking of plain experimental facts.
引用
收藏
页码：3299 / 3301
页数：3
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