Field plate related reliability improvements in GaN-on-Si HEMTs

被引：6

作者：

Chini, A. ^{[1
]}

Soci, F. ^{[1
]}

Fantini, F. ^{[1
]}

Nanni, A. ^{[2
]}

Pantellini, A. ^{[2
]}

Lanzieri, C. ^{[2
]}

Bisi, D. ^{[3
]}

Meneghesso, G. ^{[3
]}

Zanoni, E. ^{[3
]}

机构：

[1] Univ Modena & Reggio Emilia, Dept Informat Engn, I-41125 Modena, Italy

[2] SELEX Sistemi Integrati SpA, I-00131 Rome, Italy

[3] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

来源：

MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 9-10期

关键词：

Electric fields - III-V semiconductors - Plates (structural components) - Gallium nitride - Silicon compounds - Reliability;

D O I：

10.1016/j.microrel.2012.06.040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

State of the art GaN on Silicon HEMTs fabricated with and without a field-plate structure have been tested by means of DC and RF reliability tests. The introduction of the field-plate structure greatly improves device reliability both during DC as well as RF testing. Results are thus suggesting that reliability in NOFP and FP devices is mainly limited by the high electric fields within the device structure causing an increase in traps concentration. (C) 2012 Elsevier Ltd. All rights reserved.

引用

页码：2153 / 2158

页数：6

共 10 条

[1] Evaluation and Numerical Simulations of GaN HEMTs Electrical Degradation [J].

Chini, Alessandro ;

Di Lecce, Valerio ;

Esposto, Michele ;

Meneghesso, Gaudenzio ;

Zanoni, Enrico .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (10) :1021-1023

[2] Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors [J].

Faqir, Mustapha ;

Verzellesi, Giovanni ;

Chini, Alessandro ;

Fantini, Fausto ;

Danesin, Francesca ;

Meneghesso, Gaudenzio ;

Zanoni, Enrico ;

Dua, Christian .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (02) :240-247

[3] Enhancement of breakdown voltage in AlGaN/GaN high electron mobility transistors using a field plate [J].

Karmalkar, S ;

Mishra, UK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (08) :1515-1521

[4]

Lee SM, 2008, INT REL PHY, P446, DOI 10.1109/RELPHY.2008.4558926

[5] ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors [J].

Ma, Chenyue ;

Chen, Hongwei ;

Zhou, Chunhua ;

Huang, Sen ;

Yuan, Li ;

Roberts, John ;

Chen, Kevin. J. .

JOURNAL OF APPLIED PHYSICS, 2011, 110 (11)

[6]

Medjdoub F, 2010, IEEE DRC, P195

[7]

Rozman D, 2009, IEEE ROCS, P7

[8] Integrated Optical and Electrical Analysis: Identifying Location and Properties of Traps in AlGaN/GaN HEMTs During Electrical Stress [J].

Tapajna, Milan ;

Simms, Richard J. T. ;

Pei, Yi ;

Mishra, Umesh K. ;

Kuball, Martin .

IEEE ELECTRON DEVICE LETTERS, 2010, 31 (07) :662-664

[9] Performance and RF reliability of GaN-on-SiC HEMT's using dual-gate architectures [J].

Vetury, R. ;

Shealy, J. B. ;

Green, D. S. ;

McKenna, J. ;

Brown, J. D. ;

Gibb, S. R. ;

Leverich, K. ;

Garber, P. A. ;

Poulton, M. J. .

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, :714-717

[10]

Wu Y.F., 2006, IEEE 64 DEV RES C, P151

← 1 →