Higher-order nonlinear dielectric microscopy

被引：34
作者：
Cho, Y [1 ]
Ohara, K [1 ]
机构：
[1] Tohoku Univ, Elect Commun Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 23期
关键词：
D O I：
10.1063/1.1421645
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A higher-order nonlinear dielectric microscopy technique with higher lateral resolution than conventional nonlinear dielectric imaging is investigated. The proposed scheme involves the measurement of higher-order nonlinear dielectric constants, with sensitivity to the first 0.75 nm in depth for LiNbO3 substrate surface. This technique is demonstrated to be very useful for observing surface layers of the order of unit cell thickness on ferroelectric materials. (C) 2001 American Institute of Physics.
引用
收藏
页码：3842 / 3844
页数：3
相关论文
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