Electrical and Optical Characterization of Ni/Al0.3Ga0.7N/GaN Schottky Barrier Diodes

被引：4

作者：

Kordos, P. ^{[1
,2
]}

Skriniarova, J. ^{[1
]}

Chvala, A. ^{[1
]}

Florovic, M. ^{[1
]}

Kovac, J. ^{[1
]}

Donoval, D. ^{[1
]}

机构：

[1] Slovak Univ Technol Bratislava, Inst Elect & Photon, SK-81219 Bratislava, Slovakia

[2] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2012年 / 41卷 / 11期

关键词：

AlGaN/GaN; Schottky barrier; transport mechanisms; dislocation density; TRANSPORT;

D O I：

10.1007/s11664-012-2184-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ni/AlGaN/GaN Schottky barrier diodes were characterized by electrical and optical measurements. Analysis of temperature-dependent (80 K to 550 K) current-voltage characteristics considering various transport mechanisms shows that the tunneling current dominates in the samples investigated. Thermionic emission current, extracted from the total current by a fitting procedure, yielded an effective barrier height of 1.36 eV to 1.39 eV at 300 K, and its slight decrease with increased temperature. This result shows that significantly lower barrier heights reported before (0.73 eV to 0.96 eV) follow from an assumption that the measured and thermionic currents are equal. The barrier height of 1.66 eV extracted from photoemission measurements confirms that electrically evaluated barrier heights are underestimated. The tunneling current contribution is considered to be dislocation governed, and a dislocation density of about 2 x 10(8) cm(-2) is calculated.

引用

页码：3017 / 3020

页数：4

共 16 条

[1] Electrical characterization of n-type Al0.30Ga0.70N Schottky diodes [J].

Arehart, A. R. ;

Allerman, A. A. ;

Ringel, S. A. .

JOURNAL OF APPLIED PHYSICS, 2011, 109 (11)

[2] Electrical characterization of MS and MIS structures on AlGaN/AlN/GaN heterostructures [J].

Arslan, Engin ;

Butun, Serkan ;

Safak, Yasemin ;

Uslu, Habibe ;

Tascioglu, Ilke ;

Altindal, Semsettin ;

Ozbay, Ekmel .

MICROELECTRONICS RELIABILITY, 2011, 51 (02) :370-375

[3] Mechanism of dislocation-governed charge transport in Schottky diodes based on gallium nitride [J].

Belyaev, A. E. ;

Boltovets, N. S. ;

Ivanov, V. N. ;

Klad'ko, V. P. ;

Konakova, R. V. ;

Kudrik, Ya. Ya. ;

Kuchuk, A. V. ;

Milenin, V. V. ;

Sveshnikov, Yu. N. ;

Sheremet, V. N. .

SEMICONDUCTORS, 2008, 42 (06) :689-693

[4] ANALYSIS OF IV MEASUREMENTS ON PTSI-SI SCHOTTKY STRUCTURES IN A WIDE TEMPERATURE-RANGE [J].

DONOVAL, D ;

BARUS, M ;

ZDIMAL, M .

SOLID-STATE ELECTRONICS, 1991, 34 (12) :1365-1373

[5]

Estropov V.V., 2000, SEMICONDUCTORS, V34, P1305

[6] Gate leakage current in GaN-based mesa- and planar-type heterostructure field-effect transistors [J].

Kovac, J. ;

Satka, A. ;

Chvala, A. ;

Donoval, D. ;

Kordos, P. ;

Delage, S. .

MICROELECTRONICS RELIABILITY, 2012, 52 (07) :1323-1327

[7] Influence of threading dislocations on GaN-based metal-semiconductor-metal ultraviolet photodetectors [J].

Li, Dabing ;

Sun, Xiaojuan ;

Song, Hang ;

Li, Zhiming ;

Chen, Yiren ;

Miao, Guoqing ;

Jiang, Hong .

APPLIED PHYSICS LETTERS, 2011, 98 (01)

[8] Temperature dependence of current-voltage characteristics of Ni-AlGaN/GaN Schottky diodes [J].

Lim, Wantae ;

Jeong, Jae-Hyun ;

Lee, Jae-Hoon ;

Hur, Seung-Bae ;

Ryu, Jong-Kyu ;

Kim, Ki-Se ;

Kim, Tae-Hyung ;

Song, Sang Yeob ;

Yang, Jong-In ;

Pearton, S. J. .

APPLIED PHYSICS LETTERS, 2010, 97 (24)

[9] Origins of the temperature dependence of the series resistance, ideality factor and barrier height based on the thermionic emission model for n-type GaN Schottky diodes [J].

Lin, Yow-Jon .

THIN SOLID FILMS, 2010, 519 (02) :829-832

[10] Evaluating AlGaN/AlN/GaN heterostructure Schottky barrier heights with flat-band voltage from forward current-voltage characteristics [J].

Lv, Yuanjie ;

Lin, Zhaojun ;

Meng, Lingguo ;

Yu, Yingxia ;

Luan, Chongbiao ;

Cao, Zhifang ;

Chen, Hong ;

Sun, Baoquan ;

Wang, Zhanguo .

APPLIED PHYSICS LETTERS, 2011, 99 (12)

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