Measurement of proton radiation damage to Si avalanche photodiodes

被引：23
作者：
Sun, XL
Reusser, D
Dautet, H
Abshire, JB
机构：
[1] NASA,GODDARD SPACE FLIGHT CTR,LASER REMOTE SENSING BRANCH,GREENBELT,MD 20771
[2] EG&G OPTOELECT CANADA,VAUDREUIL,PQ J7V 8P7,CANADA
[3] SWISS NATL SCI FDN,CH-2014 BOLE,SWITZERLAND
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1997年 / 44卷 / 12期
关键词：
D O I：
10.1109/16.644630
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of proton radiation damage on EG&G C30902S Si avalanche photodiodes (APD's) were measured, The APD bulk leakage current increased at 0.29 fA/rad, or about 1800 dark photoelectrons per rad(Si) at -10 degrees C under 16.2 MeV protons. There were little changes in the breakdown voltage, with the radiation doses up to 30 krad(Si). The increase in the total dark currents below the breakdown voltage was insignificant until 3 krad(Si).
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收藏
页码：2160 / 2166
页数：7
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